SFH485P nm) equivalent, gaaias infrared emitter (880 nm).
q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Small tolerance: Chip surface to case surface q Good spectral match to silicon photodetec.
q Light-reflection switches for steady and
Wechsellichtbetrieb bis 500 kHz
q LWL
varying intensity (max. 500 kHz)
q Fi.
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs Surge current Verlustleistung Power dissipation Wärmewi.
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