* q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481: Same package as BPX 43, BPY 63 q SFH 482: Same p
SFH480
Siemens Semiconductor Group
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Gaalas-ir-lumineszenzdioden 880 nm gaalas infrared emitters 880 nm.
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi.
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