Emitters Datasheet | Specifications & PDF Download

SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX EPOXY .039 .048 .018 OD-100 FEATURES ANODE (CASE) .357 .362 .100 • • • • • Ultra high power output F

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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 www.DataSheet4U.com OD-24F2 FEATURES ANODE (CASE) .209 .220 • High current capability • 8

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SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES • Ultra high power output • Four wire bonds on die corners • Very narrow optical beam • Standard 3-lead T

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GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi

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HI-REL GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 OD-880LJ FEATURES ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High power out

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880LHT 1.00 MIN. GLASS DOME .015 • Extended operating temperature range .209 .220 • N

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HI-REL GaAlAs IR EMITTERS FEATURES .010 R. GLASS DOME .005 .010 .082 .088 ANODE .084 .092 .058 .062 OD-880PP • High reliability LPE GaAlAs IRLEDs •

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HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission fo

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SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES .357 .362 .100 OD-50W GLASS .012 HIGH MAX ANODE (CASE) .157 .169 .018 • • • • • Ultra high power ou

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HIGH TEMPERATURE GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .209 .220 OD-880FHT FEATURES • Extended operating temperature range • No i

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) .209 .220 OD-880WHT GLASS .006 HIGH MAX 1.00 MIN. .015 • Extended operating temperature

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GaAs Infrared Emitters Optoelectronic Products 4-28 FPE500 FPE510 General Description The FPE5OO/FPE510 are GaAs infrared-emitting diodes. When forw

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880WHT GLASS .006 HIGH MAX 1.00 MIN. .015 • Extended operating temperature range .209

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HI-REL GaAlAs IR EMITTERS 1.00 MIN. OD-880WJ FEATURES GLASS .006 HIGH MAX .015 ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High

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HIGH-POWER GaAlAs IR EMITTERS FEATURES EPOXY DOME .145 MAX .080 .017 .178 .195 ANODE (CASE) OD-880E • High reliability liquid-phase epitaxially grow

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HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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HIGH-POWER GaAlAs IR EMITTERS OD-850W FEATURES • High optical output • 850nm peak emission • Hermetically sealed TO-46 package • Wide emision angle t

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