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SFH415 Datasheet - Siemens Semiconductor Group

SFH415 GaAs Infrared Emitters

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol .

SFH415 Features

* q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie =

SFH415 Datasheet (47.43 KB)

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Datasheet Details

Part number:

SFH415

Manufacturer:

Siemens Semiconductor Group

File Size:

47.43 KB

Description:

Gaas infrared emitters.

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SFH415 GaAs Infrared Emitters Siemens Semiconductor Group

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