* q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie =
SFH415
Siemens Semiconductor Group
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Gaas infrared emitters.
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
SFH 415 SFH 416
Cathode 29 27 9.0 8.2
spacing 2.54mm
0.4 0.8
1.8 1.2
7.8 7.5
5.9 5.5
0.4 0.6
.
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