SFH415 GaAs Infrared Emitters

Siemens Semiconductor Group

Description

GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 9.0 8.2 spacing 2.54mm 0.4 0.8 1.8 1.2 7.8 7.5 5.9 5.5 0.4 0.6 .
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchl.

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Datasheet Specifications

Part number: SFH415
Manufacturer: Siemens Semiconductor Group
File Size: 47.43 KB
Datasheet: SFH415_SiemensSemiconductorGroup.pdf
Description: GaAs Infrared Emitters

Features

* q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie =

Applications

* q IR remote control of hi-fi and TV-sets, video tape recorders, dimmers q Remote control of various equipment Semiconductor Group 1 1997-11-01 fex06630 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) 4.0 3.4 Chip position 0.6 0.4 GEX06630 fexf6626 4.8 4.2 ø4.8 ø5.1 0.6 0.4 SFH

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SFH4110 SFH416 SFH401 SFH420 SFH4200 SFH4205

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SFH415 GaAs Infrared Emitters Siemens Semiconductor Group

Siemens Semiconductor Group SFH415-like datasheet