SFH400 Datasheet - Siemens Semiconductor Group

SFH400 GaAs Infrared Emitter

SFH 401: Betriebs- und Lagertemperatur Operating and storage temperature range SFH 400, SFH 402: Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 .

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 GEO06314 Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g ø5.6 ø5.3 ø0.45 (2.7) Chip position Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 0 2.54 mm spacing welded 14.5 12.5 Approx. weight 0.35 g Chip position (2.7) ø0.45 5.5 5.0 14.5 12.5 5.3 5.0 ø5.6 ø5.3 GET06013 .

SFH400 Features

* q Fabricated in a liquid phase epitaxy process q Cathode is electrically connected to the case q High reliability q SFH 400: Same package as SFH 216 q SFH 401: Same package as BPX 43, BPY 62 q SFH 402: Same package as BPX 38, BPX 65 Applications q q q q Wechsellichtbetrieb q IR-Fernsteuerungen q In

SFH400_SiemensSemiconductorGroup.pdf