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SFH400 - GaAs Infrared Emitter

Datasheet Summary

Description

SFH 401: Betriebs- und Lagertemperatur Operating and storage temperature range SFH 400, SFH 402: Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0

Features

  • q Fabricated in a liquid phase epitaxy process q Cathode is electrically connected to the case q High reliability q SFH 400: Same package as SFH 216 q SFH 401: Same package as BPX 43, BPY 62 q SFH 402: Same package as BPX 38, BPX 65.

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Datasheet preview – SFH400

Datasheet Details

Part number SFH400
Manufacturer Siemens Semiconductor Group
File Size 64.04 KB
Description GaAs Infrared Emitter
Datasheet download datasheet SFH400 Datasheet
Additional preview pages of the SFH400 datasheet.

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Full PDF Text Transcription

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 GEO06314 Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g ø5.6 ø5.3 ø0.45 (2.7) Chip position Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 0 2.54 mm spacing welded 14.5 12.5 Approx. weight 0.35 g Chip position (2.7) ø0.45 5.5 5.0 14.5 12.5 5.3 5.0 ø5.6 ø5.3 GET06013 Cathode (SFH 402, BPX 65) Anode (SFH 482) Approx. weight 0.5 g 2.54 spacing ø4.8 ø4.6 Radiant sensitive area 1.1 .9 0 1.1 0.9 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 1 1998-04-16 fet06092 fet06091 5.3 5.0 6.4 5.6 ø4.8 ø4.
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