GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) ø0.45 0.91.1 Radiant Sensitive area 1.10.9 ø4.8 ø4.6 2.54mm spacing ø5.6 ø5.3 5.3 14.5 5.0 12.5 7.4 6.6 Approx.
weight 0.5 g GEO06314 2.54 mm spacing ø4.8 ø4.6 ø0.45 welded 14.5 12.5 (2.7) Chip position 0.91.1 5.3 5.0 glass 6.4 lens 5.6 Approx.
weight 0.35 g Anode = SFH 481 Cathode = SFH 401 1.10.9 (package) ø5.6 ø5.3 GET06091 SFH 400 SFH 401 SFH 402 fet0