SFH485
Siemens
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Gaaias infrared emitters.
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SFH480 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
(Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm)
SFH 480 SFH 481 SFH 482
2.54mm spacing
ø0.45
ø4.8 ø4.6
1 0.9 .1
Chip posi.
SFH481 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
(Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm)
SFH 480 SFH 481 SFH 482
2.54mm spacing
ø0.45
ø4.8 ø4.6
1 0.9 .1
Chip posi.
SFH482 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
(Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm)
SFH 480 SFH 481 SFH 482
2.54mm spacing
ø0.45
ø4.8 ø4.6
1 0.9 .1
Chip posi.
SFH483 - GaAlAs Infrared Emitter
(OSRAM)
GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
SFH 483 L/M E7800
Wesentliche Merkmale
• Hergestellt im Schme.
SFH483 - GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter
(Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter
SFH 483
ø0.45
Chip position
1 0.9 .1 1.1 .9 0
ø5.5 ø5.2
2.7
1
2.54 mm spacing
14.5 12.5
3..
SFH483E7800 - GaAlAs Infrared Emitter
(OSRAM)
2007-12-07
GaAlAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0
SFH 483 E7800
Features: • Fabricated in a liquid phase epitaxy process • Anod.
SFH484 - GaAIAs Infrared Emitters
(Siemens Semiconductor Group)
GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm)
SFH 484 SFH 485
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.5
9.0 8.2 7.8 7..
SFH485P - GaAIAs Infrared Emitter (880 nm)
(Siemens Semiconductor Group)
GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm)
SFH 485 P
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
5.0 4.2
Cathode 3.85 .
SFH486 - GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
(Siemens Semiconductor Group)
GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm)
SFH 486
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
9.0 8.2 7.8 7.5
ø5.1 ø4..
SFH4860 - GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm
(Siemens Semiconductor Group)
GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm)
SFH 4860
Chip position
2.54 mm spacing
ø0.45
14.5 12.5
ø4.8 ø4.6
Cathode
.