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SFH480

GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm

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Distributor ams OSRAM Group SFH-480-2 EMITTER IR 880NM 200MA RADIAL DigiKey 0 0
$0

SFH480 Datasheet (66.58 KB)

Preview of SFH480 PDF Datasheet

Datasheet Details

Part number:

SFH480

Manufacturer:

Siemens Semiconductor Group

File Size:

66.58 KB

Description:

Gaalas-ir-lumineszenzdioden 880 nm gaalas infrared emitters 880 nm

SFH480 Features

* q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481: Same package as BPX 43, BPY 63 q SFH 482: Same p

SFH480 General Description

SFH 481: Betriebs- und Lagertemperatur Operating and storage temperature range SFH 480, SFH 482: Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 .

📁 Related Datasheet

SFH481 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm (Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi.

SFH482 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm (Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi.

SFH483 - GaAlAs Infrared Emitter (OSRAM)
GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale • Hergestellt im Schme.

SFH483 - GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter (Siemens Semiconductor Group)
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter SFH 483 ø0.45 Chip position 1 0.9 .1 1.1 .9 0 ø5.5 ø5.2 2.7 1 2.54 mm spacing 14.5 12.5 3..

SFH483E7800 - GaAlAs Infrared Emitter (OSRAM)
2007-12-07 GaAlAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 SFH 483 E7800 Features: • Fabricated in a liquid phase epitaxy process • Anod.

SFH484 - GaAIAs Infrared Emitters (Siemens Semiconductor Group)
GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.5 9.0 8.2 7.8 7..

TAGS

SFH480 GaAlAs-IR-Lumineszenzdioden 880 GaAlAs Infrared Emitters 880 Siemens Semiconductor Group

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