SFH485P Datasheet, Nm), Siemens Semiconductor Group

SFH485P Features

• Nm) q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Small tolerance: Chip surface to case surface q Good spectral match to silicon photodetectors q Plane su

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SFH485P

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Siemens Semiconductor Group

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📄 Datasheet

Description:

Gaaias infrared emitter (880 nm). Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Rever

SFH485P Application

• Applications q Light-reflection switches for steady and Wechsellichtbetrieb bis 500 kHz q LWL varying intensity (max. 500 kHz) q Fibre optic trans

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SFH485P

Siemens Semiconductor Group

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