SFH4860 GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Siemens Semiconductor Group

Description

GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) SFH 4860 Chip position 2.54 mm spacing ø0.45 14.5 12.5 ø4.8 ø4.6 Cathode .
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchl.

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Datasheet Specifications

Part number: SFH4860
Manufacturer: Siemens Semiconductor Group
File Size: 42.22 KB
Datasheet: SFH4860_SiemensSemiconductorGroup.pdf
Description: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Applications

* q Photointerrupters q Hermetically sealed package Typ Type SFH 4860 Bestellnummer Ordering Code Q62702-P5053 Gehäuse Package 18 A3 DIN 41876 (TO-18), Bodenplatte, Plankappe, Anschlüsse im 2.54-mm-Raster (1/10’’), Anodenkennzeichnung: Nase am Gehäuseboden 18 A3 DIN 870 (TO -18), flat glass cap, le

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SFH4860 GaAlAs-Lumineszenzdiode 660 GaAlAs Light Emitting Diode 660 Siemens Semiconductor Group

Siemens Semiconductor Group SFH4860-like datasheet