SFH4860 Datasheet - Siemens Semiconductor Group

SFH4860 GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol .

GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) SFH 4860 Chip position 2.54 mm spacing ø0.45 14.5 12.5 ø4.8 ø4.6 Cathode 4.05 3.45 GMO06983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Strahlung im sichtbaren Rotbereich ohne IR-Anteil q Kathode galvanisch mit dem Gehäuseboden verbunden q Sehr hoher Wirkungsgrad q Hohe Zuverlässigkeit q Kurze Schaltzeiten Anwendungen q Lichtschranken für Gleich- und W.

SFH4860 Features

* q Radiation without IR in the visible red range q Cathode is electrically connected to the case q Very high efficiency q High reliability q Short switching time Applications q Photointerrupters q Hermetically sealed package Typ Type SFH 4860 Bestellnummer Ordering Code Q62702-P5053 Gehäuse Packag

SFH4860 Datasheet (42.22 KB)

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Datasheet Details

Part number:

SFH4860

Manufacturer:

Siemens Semiconductor Group

File Size:

42.22 KB

Description:

Gaalas-lumineszenzdiode 660 nm gaalas light emitting diode 660 nm.

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SFH4860 GaAlAs-Lumineszenzdiode 660 GaAlAs Light Emitting Diode 660 Siemens Semiconductor Group

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