SFH4860 - GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Siemens Semiconductor Group

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Datasheet Details

Part number	SFH4860
Manufacturer	Siemens Semiconductor Group
File Size	42.22 KB
Description	GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm
Datasheet	SFH4860_SiemensSemiconductorGroup.pdf

SFH4860 Product details

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value 55 + 125 125 3 50 1 140 450 160 Einheit Unit °C °C V mA A mW K/W K/W Top; Tstg Tj VR IF IFSM Ptot RthJA RthJC Semiconductor Group 2 1998-08-25 SFH 4860 Kennwerte (TA = 25 °

Features

q Radiation without IR in the visible red range q Cathode is electrically connected to the case q Very high efficiency q High reliability q Short switching time.

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Published: May 20, 2005 |