SFH484 Datasheet - Siemens Semiconductor Group

SFH484 - GaAIAs Infrared Emitters

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand, freie Beinchenlänge max. 10 mm T.

GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.5 9.0 8.2 7.8 7.5 Cathode 5.9 5.5 ø5.1 ø4.8 Chip position GEX06271 Approx. weight 0.5 g Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.5 9.0 8.2 7.8 7.5 Cathode 5.9 5.5 ø5.1 ø4.8 1.5 29 27 4.8 4.2 Chip position 0.6 0.4 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Hergestel.

SFH484 Features

* q q q q q Si-Fotoempfänger q SFH 484: Gehäusegleich mit LD 274 q SFH 485: Gehäusegleich mit SFH 300, Fabricated in a liquid phase epitaxy process High reliability Spectral match with silicon photodetectors SFH 484: Same package as LD 274 SFH 485: Same package as SFH 300, SFH 203 SFH 203 Anwendung

SFH484_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

SFH484

Manufacturer:

Siemens Semiconductor Group

File Size:

48.96 KB

Description:

Gaaias infrared emitters.

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SFH484 GaAIAs Infrared Emitters Siemens Semiconductor Group