Part number:
OD-880LJ
Manufacturer:
OptoDiode
File Size:
284.97 KB
Description:
Hi-rel gaalas ir emitters.
* ANODE (CASE) .209 .220
* High reliability LPE GaAlAs IRLEDs
* High power output
* 880nm peak emission
* Hermetically sealed TO-46 package
* MIL-S-19500 screening available .041 .183 .152 .186 .156 .017 .024 .043 .100
* No internal coatings All su
OD-880LJ Datasheet (284.97 KB)
OD-880LJ
OptoDiode
284.97 KB
Hi-rel gaalas ir emitters.
📁 Related Datasheet
OD-880L - HIGH-POWER GaAlAs IR EMITTERS
(OPTO DIODE)
HIGH-POWER GaAlAs IR EMITTERS
OD-880L
FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi.
OD-880L - HIGH-POWER GaAlAs IR EMITTERS
(OptoDiode)
HIGH-POWER GaAlAs IR EMITTERS
OD-880L
FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi.
OD-880LHT - HIGH TEMPERATURE GaAlAs IR EMITTERS
(OPTO DIODE)
HIGH TEMPERATURE GaAlAs IR EMITTERS
FEATURES
ANODE (CASE)
OD-880LHT
1.00 MIN. GLASS DOME .015
• Extended operating temperature range
.209 .220
• N.
OD-880LHT - HIGH TEMPERATURE GaAlAs IR EMITTERS
(OptoDiode)
HIGH TEMPERATURE GaAlAs IR EMITTERS
FEATURES
ANODE (CASE)
OD-880LHT
1.00 MIN. GLASS DOME .015
• Extended operating temperature range
.209 .220
• N.
OD-880-C - HIGH-POWER GaAlAs IR EMITTER CHIPS
(OptoDiode)
HIGH-POWER GaAlAs IR EMITTER CHIPS
FEATURES
OD-880-C
.014
• High reliability LPE GaAlAs IRLED chips
• Graded-bandgap LED structure for high radian.
OD-880E - HIGH-POWER GaAlAs IR EMITTERS
(OptoDiode)
HIGH-POWER GaAlAs IR EMITTERS
FEATURES
EPOXY DOME .145 MAX .080 .017 .178 .195
ANODE (CASE)
OD-880E
• High reliability liquid-phase epitaxially grow.
OD-880F - HIGH-POWER GaAlAs IR EMITTERS
(OPTO DIODE)
HIGH-POWER GaAlAs IR EMITTERS
1.00 MIN. GLASS DOME
OD-880F
FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission fo.
OD-880F - HIGH-POWER GaAlAs IR EMITTERS
(OptoDiode)
HIGH-POWER GaAlAs IR EMITTERS
1.00 MIN. GLASS DOME
OD-880F
FEATURES
ANODE (CASE) .209 .212
• High reliability liquid-phase epitaxially grown GaAlAs.