OptoDiode Datasheet | Specifications & PDF Download

HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 www.DataSheet4U.com OD-24F2 FEATURES ANODE (CASE) .209 .220 • High current capability • 8

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HIGH-POWER GaAlAs IR EMITTER CHIPS FEATURES OD-880-C .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radian

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880LHT 1.00 MIN. GLASS DOME .015 • Extended operating temperature range .209 .220 • N

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HI-REL GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 OD-880LJ FEATURES ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High power out

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HI-REL GaAlAs IR EMITTERS FEATURES .010 R. GLASS DOME .005 .010 .082 .088 ANODE .084 .092 .058 .062 OD-880PP • High reliability LPE GaAlAs IRLEDs •

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880WHT GLASS .006 HIGH MAX 1.00 MIN. .015 • Extended operating temperature range .209

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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES ANODE (CASE) .209 .212 • High reliability liquid-phase epitaxially grown GaAlAs

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HI-REL GaAlAs IR EMITTERS 1.00 MIN. OD-880WJ FEATURES GLASS .006 HIGH MAX .015 ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High

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HIGH-POWER GaAlAs IR EMITTERS FEATURES EPOXY DOME .145 MAX .080 .017 .178 .195 ANODE (CASE) OD-880E • High reliability liquid-phase epitaxially grow

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HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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HIGH-POWER GaAlAs EMITTER CHIPS .024 .005 .006 D 2 PLACES www.DataSheet4U.com OD-24x24-C FEATURES • High current capability • 2 bond pads for unifo

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HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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