OptoDiode OD-880-C
HIGH-POWER GaAlAs IR EMITTER CHIPS
| Part No. | OD-880-C |
|---|---|
| Datasheet | OD-880-C Download |
| Manufacturer | OptoDiode |
| Description | HIGH-POWER GaAlAs IR EMITTER CHIPS |
| Buy | Stock & Price |
FEATURES
OD-880-C .014● High reliability LPE GaAlAs IRLED chips
● Graded-bandgap LED structure for high radiant power output .014
● 880nm peak emission
● Good bondability
● Good ohmic contacts (gold alloys) EMITTING SURFACE GOLD CONTACTS .006 N P .003 .005 All dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Forward Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA IF = 20mA IF = 50mA IF = 100mA IR = 10MA VR = 0V 5 MIN 8 TYP 14 2 880 80 30 17 MAX UNITS mW nm 1.9 Volts Volts Msec Msec pF nm Reverse Breakdown Voltage, VR 1.55 0.5 0.5