Datasheet4U Logo Datasheet4U.com

OD-880-C - HIGH-POWER GaAlAs IR EMITTER CHIPS

Features

  • OD-880-C .014.
  • High reliability LPE GaAlAs IRLED chips.
  • Graded-bandgap LED structure for high radiant power output .014.
  • 880nm peak emission.
  • Good bondability.
  • Good ohmic contacts (gold alloys).

📥 Download Datasheet

Datasheet preview – OD-880-C

Datasheet Details

Part number OD-880-C
Manufacturer OptoDiode
File Size 290.96 KB
Description HIGH-POWER GaAlAs IR EMITTER CHIPS
Datasheet download datasheet OD-880-C Datasheet
Additional preview pages of the OD-880-C datasheet.

📁 Similar Datasheet

  • OD-880F - HIGH-POWER GaAlAs IR EMITTERS (OPTO DIODE)
  • OD-880FHT - HIGH TEMPERATURE GaAlAs IR EMITTERS (OPTO DIODE)
  • OD-880L - HIGH-POWER GaAlAs IR EMITTERS (OPTO DIODE)
  • OD-880LHT - HIGH TEMPERATURE GaAlAs IR EMITTERS (OPTO DIODE)
  • OD-880W - HIGH-POWER GaAlAs IR EMITTERS (OPTO DIODE)
  • OD-880WHT - HIGH TEMPERATURE GaAlAs IR EMITTERS (OPTO DIODE)
  • OD-8317 - FIBER OPTIC DEVICES (NEC)
  • OD-8363 - LED MODULE (1.2 UM) (NEC)
  • OD-850FHT - HIGH-POWER GaAlAs IRLED ILLUMINATOR (OPTO DIODE)
  • OD-850LHT - HIGH-POWER GaAlAs IRLED ILLUMINATOR (OPTO DIODE)
Other Datasheets by OptoDiode
  • OD-880E - HIGH-POWER GaAlAs IR EMITTERS
  • OD-880F - HIGH-POWER GaAlAs IR EMITTERS
  • OD-880L - HIGH-POWER GaAlAs IR EMITTERS
  • OD-880LHT - HIGH TEMPERATURE GaAlAs IR EMITTERS
  • OD-880LJ - HI-REL GaAlAs IR EMITTERS
  • OD-880PP - HI-REL GaAlAs IR EMITTERS
  • OD-880W - HIGH-POWER GaAlAs IR EMITTERS
  • OD-880WHT - HIGH TEMPERATURE GaAlAs IR EMITTERS

Full PDF Text Transcription

Click to expand full text
HIGH-POWER GaAlAs IR EMITTER CHIPS FEATURES OD-880-C .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output .014 • 880nm peak emission • Good bondability • Good ohmic contacts (gold alloys) EMITTING SURFACE www.DataSheet4U.com GOLD CONTACTS .006 N P .003 .005 All dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Forward Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA IF = 20mA IF = 50mA IF = 100mA IR = 10MA VR = 0V 5 MIN 8 TYP 14 2 880 80 30 17 MAX UNITS mW nm 1.9 Volts Volts Msec Msec pF nm Reverse Breakdown Voltage, VR 1.55 0.5 0.
Published: |