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OD-24F2 - HIGH-POWER GaAlAs IR EMITTERS
HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 www.DataSheet4U.com OD-24F2 FEATURES ANODE (CASE) .209 .220 • High current capability • 8.SFH481 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi.OD-880F - HIGH-POWER GaAlAs IR EMITTERS
HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES ANODE (CASE) .209 .212 • High reliability liquid-phase epitaxially grown GaAlAs.OD-880PP - HI-REL GaAlAs IR EMITTERS
HI-REL GaAlAs IR EMITTERS FEATURES .010 R. GLASS DOME .005 .010 .082 .088 ANODE .084 .092 .058 .062 OD-880PP • High reliability LPE GaAlAs IRLEDs • .OD-880W - HIGH-POWER GaAlAs IR EMITTERS
HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi.OD-880WJ - HI-REL GaAlAs IR EMITTERS
HI-REL GaAlAs IR EMITTERS 1.00 MIN. OD-880WJ FEATURES GLASS .006 HIGH MAX .015 ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High.SFH4510 - (SFH4510 / SFH4515) GaAs Infrared Emitters
GaAs-IR-Lumineszenzdioden (950 nm) in SMR® Gehäuse GaAs Infrared Emitters (950 nm) in SMR® Package SFH 4510 SFH 4515 SFH 4510 www.DataSheet4U.com SF.OD-880WHT - HIGH TEMPERATURE GaAlAs IR EMITTERS
HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) .209 .220 OD-880WHT GLASS .006 HIGH MAX 1.00 MIN. .015 • Extended operating temperature .OD-880LHT - HIGH TEMPERATURE GaAlAs IR EMITTERS
HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880LHT 1.00 MIN. GLASS DOME .015 • Extended operating temperature range .209 .220 • N.OD-880W - HIGH-POWER GaAlAs IR EMITTERS
HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi.OD-880L - HIGH-POWER GaAlAs IR EMITTERS
HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi.OD-880FHT - HIGH TEMPERATURE GaAlAs IR EMITTERS
HIGH TEMPERATURE GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .209 .220 OD-880FHT FEATURES • Extended operating temperature range • No i.OD-880F - HIGH-POWER GaAlAs IR EMITTERS
HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission fo.OD-50L - SUPER HIGH-POWER GaAlAs IR EMITTERS
SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES • Ultra high power output • Four wire bonds on die corners • Very narrow optical beam • Standard 3-lead T.OD-50W - SUPER HIGH-POWER GaAlAs IR EMITTERS
SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES .357 .362 .100 OD-50W GLASS .012 HIGH MAX ANODE (CASE) .157 .169 .018 • • • • • Ultra high power ou.OD-100 - SUPER HIGH-POWER GaAlAs IR EMITTERS
SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX EPOXY .039 .048 .018 OD-100 FEATURES ANODE (CASE) .357 .362 .100 • • • • • Ultra high power output F.FPE700 - GaAs Infrared Emitters
Low-Cost General-Purpose GaAs Infrared Emitter Optoelectronic Products General Description The FPE700 is a low-cost, general-purpose, GaAs infrared-e.FPE530 - GaAs Infrared Emitters
GaAs Infrared Emitters Optoelectronic Products 4-31 FPE520 FPE530 General Description The FPE520 and FPE530 are GaAs infrared-emitting diodes. When .FPE520 - GaAs Infrared Emitters
GaAs Infrared Emitters Optoelectronic Products 4-31 FPE520 FPE530 General Description The FPE520 and FPE530 are GaAs infrared-emitting diodes. When .FPE510 - GaAs Infrared Emitters
GaAs Infrared Emitters Optoelectronic Products 4-28 FPE500 FPE510 General Description The FPE5OO/FPE510 are GaAs infrared-emitting diodes. When forw.