EMITTERS Datasheet | Specifications & PDF Download

GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi

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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 www.DataSheet4U.com OD-24F2 FEATURES ANODE (CASE) .209 .220 • High current capability • 8

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GaAs-IR-Lumineszenzdioden (950 nm) in SMR® Gehäuse GaAs Infrared Emitters (950 nm) in SMR® Package SFH 4510 SFH 4515 SFH 4510 www.DataSheet4U.com SF

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HIGH TEMPERATURE GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .209 .220 OD-880FHT FEATURES • Extended operating temperature range • No i

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SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES .357 .362 .100 OD-50W GLASS .012 HIGH MAX ANODE (CASE) .157 .169 .018 • • • • • Ultra high power ou

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GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip posi

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GaAIAs-IR-Lumineszenzdioden (880 nm) GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.5 9.0 8.2 7.8 7.

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HI-REL GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .015 OD-880LJ FEATURES ANODE (CASE) .209 .220 • High reliability LPE GaAlAs IRLEDs • High power out

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SUPER HIGH-POWER GaAlAs IR EMITTERS FEATURES • Ultra high power output • Four wire bonds on die corners • Very narrow optical beam • Standard 3-lead T

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SUPER HIGH-POWER GaAlAs IR EMITTERS .130 MAX EPOXY .039 .048 .018 OD-100 FEATURES ANODE (CASE) .357 .362 .100 • • • • • Ultra high power output F

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GaAs Infrared Emitters Optoelectronic Products 4-31 FPE520 FPE530 General Description The FPE520 and FPE530 are GaAs infrared-emitting diodes. When

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HIGH-POWER GaAlAs IR EMITTERS OD-880L FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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GaAs Infrared Emitters Optoelectronic Products 4-31 FPE520 FPE530 General Description The FPE520 and FPE530 are GaAs infrared-emitting diodes. When

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GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 1.8 1.2 9.0 8.2 7.8 7.5 5.9 5.5 spacing 2.54mm 0.4 0.6 0.4 0.8 ø4

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GaAs-IR-Lumineszenzdioden (950 nm) GaAs Infrared Emitters (950 nm) SFH 4510 SFH 4515 2.7 2.3 2.05 R 1.95 2.7 2.4 Chip position 4.5 7.5 3.9 5.5 (

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HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880WHT GLASS .006 HIGH MAX 1.00 MIN. .015 • Extended operating temperature range .209

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HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES ANODE (CASE) OD-880LHT 1.00 MIN. GLASS DOME .015 • Extended operating temperature range .209 .220 • N

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HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching wi

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