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40N60NPFD Datasheet Preview

40N60NPFD Datasheet

600V FIELD STOP IGBT

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SGT40N60NPFDPN_Datasheet
40A, 600V FIELD STOP IGBT
DESCRIPTION
SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum
performance for induction Heating, UPS, SMPS and PFC application.
FEATURES
40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A
Low conduction loss
Fast switching
High input impedance
NOMENCLATURE
ORDERING INFORMATION
Part No.
SGT40N60NPFDPN
Package
TO-3P
Marking
40N60NPFD
Hazardous Substance Control
Pb free
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
TC=25°C
TC=100°C
Pulsed Collector Current
Maximum Power Dissipation (TC=25C)
Operating Junction Temperature
Storage Temperature Range
Symbol
VCE
VGE
IC
ICM
PD
TJ
Tstg
Ratings
600
±20
80
40
120
290
2.32
-55+175
-55+175
Packing
Tube
Units
V
V
A
A
W
W/C
C
C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 1 of 6




Silan

40N60NPFD Datasheet Preview

40N60NPFD Datasheet

600V FIELD STOP IGBT

No Preview Available !

SGT40N60NPFDPN_Datasheet
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (FRD)
Thermal Resistance, Junction to Ambient
Symbol
RθJC
RθJC
RθJA
Ratings
0.24
1.4
35.5
ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter
Breakdown Voltage
C-E Leakage Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Symbol
Test conditions
Min.
BVCE
VGE=0V,IC=250uA
600
ICES
VCE=600V,VGE=0V
--
IGES
VGE=20V,VCE=0V
--
VGE(th)
IC=250uA,VCE=VGE
4.0
IC=40A,VGE=15V
--
VCE(sat)
IC=40A,VGE=15V,TC=125C
--
Cies
VCE=30V
--
Coes
VGE=0V
--
Cres
f=1MHz
--
Td(on)
--
Tr
VCE=400V
--
Td(off)
IC=40A
--
Tf
Rg=10Ω
--
Eon
VGE=15V
--
Eoff
Inductive Load,
--
Est
--
Qg
--
VCE = 300V, IC=20A,
Qge
--
VGE = 15V
Qgc
--
Typ.
--
--
--
5.0
1.8
2.1
1850
180
50
18
80
110
105
1.87
0.68
2.55
100
11
52
ELECTRICAL CHARACTERISTICS OF FRD (TC = 25°C unless otherwise noted)
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
Vfm
Trr
Qrr
Test conditions
IF = 20A TC=25C
IF = 20A TC=125C
IES =20A, dIES/dt=200A/μs
IES =20A, dIES/dt=200A/μs
Min.
--
--
--
--
Typ.
1.9
1.5
32
74
Units
C/W
C/W
C/W
Max.
--
200
±500
6.5
2.7
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Units
V
uA
nA
V
V
V
pF
ns
mJ
nC
Max.
2.6
--
--
--
Units
V
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 2 of 6


Part Number 40N60NPFD
Description 600V FIELD STOP IGBT
Maker Silan
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