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Title
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Description
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SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in push-pull amplifier, high-si...
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Features
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-12A, -55V ,RDS(on)(typ.)<175m@VGS=-10V P channel Low gate charge Low Crss Fast switching Improved dv/dt capability
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TO-220-3L
ORDERING INFORMATION
Part No. SVD9Z24NT
Package TO-220-3L
Marking SVD9Z24N
Harzardous Substance Control Pb free
Packing Type Tube
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Character...
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Datasheet
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 SVD9Z24NT Datasheet - 242.92KB |
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Distributor
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Stock
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In stock
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Price
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BuyNow
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 - Manufacturer a
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