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SVF10N60CT - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF10N60CT, a member of the SVF10N60CF 600V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 10A,600V,RDS(on)(typ. )=0.75@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet preview – SVF10N60CT

Datasheet Details

Part number SVF10N60CT
Manufacturer Silan Microelectronics
File Size 305.72 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF10N60CT Datasheet
Additional preview pages of the SVF10N60CT datasheet.

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Silan Microelectronics SVF10N60CF/T/FJD_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  10A,600V,RDS(on)(typ.)=0.75@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 11 23 3 1.Gate 2.Drain 3.
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