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Silan Microelectronics

SVF10N60CT Datasheet Preview

SVF10N60CT Datasheet

600V N-CHANNEL MOSFET

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Silan
Microelectronics
SVF10N60CF/T/FJD_Datasheet
10A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N60CF/T is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved cell and guard
ring terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
10A,600V,RDS(on)(typ.)=0.75@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
2
11
23
3
1.Gate 2.Drain 3.Source TO-220FJD-3L
1
23
TO-220F-3L
1
23
TO-220-3L
SVFXNEXXCX
Silan VDMOS Code
of F-Cell process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
N denotes N Channel
Package information.Example:
F:TO-220F; T:TO-220
REV.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
ORDERING INFORMATION
Part No.
SVF10N60CF
SVF10N60CT
SVF10N60CFJD
Package
TO-220F-3L
TO-220-3L
TO-220FJD-3L
Marking
SVF10N60CF
SVF10N60CT
10N60CFJD
Hazardous
Substance Control
Halogen free
Pb free
Halogen free
Packing
Tube
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 1 of 9




Silan Microelectronics

SVF10N60CT Datasheet Preview

SVF10N60CT Datasheet

600V N-CHANNEL MOSFET

No Preview Available !

Silan
Microelectronics
SVF10N60CF/T/FJD_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Ratings
SVF10N60CF/FJD
SVF10N60CT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC = 25C
TC = 100C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
600
±30
10
6.3
40
50 156
0.4 1.25
654
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
SVF10N60CF/FJD
SVF10N60CT
2.5 0.8
62.5 62.5
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)
Characteristics
Symbol
Test conditions
Min.
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BVDSS
IDSS
IGSS
VGS(th)
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=5.0A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V, VGS=0V,
f=1.0MHz
VDD=300V, ID=10A,
RG=25
(Note 2,3)
VDS=480V, ID=10A,
VGS=10V
(Note 2,3)
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
0.75
1086
143
12
22
42
79
41
28
6.3
13
Max.
--
1.0
±100
4.0
0.9
--
--
--
--
--
--
--
--
--
--
Unit
V
V
A
A
W
W/C
mJ
C
C
Unit
C/W
C/W
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 2 of 9


Part Number SVF10N60CT
Description 600V N-CHANNEL MOSFET
Maker Silan Microelectronics
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SVF10N60CT Datasheet PDF






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