SVF10N60CT Datasheet | Silan Microelectronics

DESCRIPTION SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES - 10A,600V,RDS(on)(typ.)=0.75@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability NOMENCLATURE 3 1.Gate 2.Drain 3.Source TO-220FJD-3L 1 23 TO-220F-3L 1 23 TO-220-3L SVFXNEXXCX Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A N denotes N Channel Package information.Example: F:TO-220F; T:TO-220 REV. Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V. Special Features indication, May be omitted. Example: E denotes embeded ESD structure ORDERING INFORMATION Part No. SVF10N60CF SVF10N60CT SVF10N60CFJD Package TO-220F-3L TO-220-3L TO-220FJD-3L Marking SVF10N60CF SVF10N60CT 10N60CFJD Hazardous Substance Control Halogen free Pb free Halogen free Packing Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.6 Page 1 of 9 Silan Microelectronics SVF10N60CF/T/FJD_Datasheet...