Silan
Microelectronics
SVF10N70F/FJ_Datasheet
10A, 700V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N70F/FJ is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary F-CellTM
high-voltage planar VDMOS technology. The improved process and cell
structure have been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high energy pulse
in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
10A,700V,RDS(on)(typ.)=0.95@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
2
1
3
1.Gate 2.Drain 3.Source
123
TO-220F-3L
123
TO-220FJ-3L
SVFXNEXXX
Silan VDMOS Code
of F-Cell process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
N denotes N Channel
Package information.
Example: F:TO-220F
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
ORDERING INFORMATION
Part No.
SVF10N70F
SVF10N70FJ
Package
TO-220F-3L
TO-220FJ-3L
Marking
SVF10N70F
SVF10N70FJ
Hazardous
Substance Control
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
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