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Silan Microelectronics
SVF10N70F/FJ_Datasheet
10A, 700V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
10A,700V,RDS(on)(typ.)=0.95@VGS=10V Low gate charge Low Crss Fast switching
Improved dv/dt capability
NOMENCLATURE
2
1 3
1.Gate 2.Drain 3.