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SVF10N70F - 700V N-CHANNEL MOSFET

Datasheet Summary

Description

SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 10A,700V,RDS(on)(typ. )=0.95@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVF10N70F
Manufacturer Silan Microelectronics
File Size 283.46 KB
Description 700V N-CHANNEL MOSFET
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Silan Microelectronics SVF10N70F/FJ_Datasheet 10A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  10A,700V,RDS(on)(typ.)=0.95@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.
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