SVF10N70F Datasheet - Silan Microelectronics

SVF10N70F 700V N-CHANNEL MOSFET

SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching p.

SVF10N70F Features

* 10A,700V,RDS(on)(typ.)=0.95@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3L 123 TO-220FJ-3L SVFXNEXXX Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Exampl

SVF10N70F-SilanMicroelectronics.pdf