SVF12N65RF
DESCRIPTION
The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
- 12A, 650V, RDS(on)(typ.)= 0.64@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
1 3
1.Gate 2.Drain 3.Source
1 23
1 23
TO-220FJH-3L
TO-220F-3L
NOMENCLATURE
Silan VDMOS Code of F-Cell process
SVF XNXXRX
Package information. Example: FJH: TO-220FJH;
F:TO-220F
Version
Nominal current, using 1 or 2 digits. Example: 4 denotes 4A
N denotes N channel
Nominal voltage, using 2 digits. Example: 60 denotes 600V
ORDERING INFORMATION
Part No.
SVF12N65RFJH...
