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Silan Microelectronics

SVF12N65RFJH Datasheet Preview

SVF12N65RFJH Datasheet

650V N-CHANNEL MOSFET

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Silan
Microelectronics
SVF12N65RF(FJH)_Datasheet
12A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The SVF12N65RF(FJH) is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved process and cell
structure have been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
12A, 650V, RDS(on)(typ.)= 0.64@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
2
1
3
1.Gate 2.Drain 3.Source
1
23
1
23
TO-220FJH-3L
TO-220F-3L
NOMENCLATURE
Silan VDMOS Code of F-Cell
process
SVF XNXXRX
Package information.
Example: FJH: TO-220FJH;
F:TO-220F
Version
Nominal current, using 1 or 2 digits.
Example: 4 denotes 4A
N denotes N channel
Nominal voltage, using 2 digits.
Example: 60 denotes 600V
ORDERING INFORMATION
Part No.
SVF12N65RFJH
SVF12N65RF
Package
TO-220FJH-3L
TO-220F-3L
Marking
12N65RFJH
SVF12N65RF
Hazardous
Substance Control
Halogen free
Halogen free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 1 of 8




Silan Microelectronics

SVF12N65RFJH Datasheet Preview

SVF12N65RFJH Datasheet

650V N-CHANNEL MOSFET

No Preview Available !

Silan
Microelectronics
SVF12N65RF(FJH)_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted)
Characteristics
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC = 25°C
TC = 100°C
Drain Current Pulsed
Power Dissipation (TC=25C)
- Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Reverse Diode dv/dt (Note 2)
MOSFET dv/dt Ruggedness (Note 3)
Operation Junction Temperature Rating
Storage Temperature Rating
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
650
±30
12
7.6
48
39
0.3
790
4.5
50
-55+150
-55+150
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
3.2
62.5
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise noted)
Characteristics
DrainSource Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DrainSource Breakdown Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Rg
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=6.0A
f=1.0MHz
VDS=25V, VGS=0V, f=1.0MHz
VDD=325V, ID=12A, RG=24
(Notes 4, 5)
VDS=520V, ID=12A, VGS=10V
(Notes 4, 5)
Min.
650
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
0.64
3.6
1456
147
16
26
48
90
47
37
10
16
Max.
--
1.0
±100
4.0
0.8
--
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 2 of 8


Part Number SVF12N65RFJH
Description 650V N-CHANNEL MOSFET
Maker Silan Microelectronics
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