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Title
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Description
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SVF6N70MJG/D/K/N is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widel...
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Features
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6A,700V,RDS(on(typ.)=1.35@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
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1 3
1.Gate 2.Drain 3.Source
12 3
TO-262-3L
123 TO-251N-3L
12 3
TO-251J-3L
1 3
TO-252-2L
ORDERING INFORMATION
Part No.
SVF6N70MJG SVF6N70DTR SVF6N70K SVF6N70MN
Package
TO-251J-3L TO-252-2L TO-262-3L TO-251N-3L
Marking
SVF6N70MJG ...
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Datasheet
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 SVF6N70N Datasheet - 370.24KB |
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Distributor
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Stock
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In stock
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Price
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BuyNow
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 - Manufacturer a
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