700V Datasheet | Specifications & PDF Download

SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MO

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HCT70R1K6 Super Junction MOSFET Jan 2018 HCT70R1K6 700V N-Channel Super Junction MOSFET Features  Very Low FOM (RDS(on) X Qg)  Extremely low swit

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NV6144C 700V Advanced GaNSlim Power IC NV6144C 1. Feature • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate G

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NV6148C 700V Advanced GaNSlim Power IC NV6148C 1. Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate

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MP174A 700V Non-Isolated Off-Line Regulator, Up to 400mA Output Current with Improved EMI Performance DESCRIPTION The MP174A is a primary-side regula

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S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Package JEDEC TO

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MP171 700 V Non-Isolated Off-Line Regulator Up to 60 mA Output Current NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP171A DESCRIPTION FEATURES R MP

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MP172 700 V Non-Isolated Off-Line Regulator Up to 120 mA Output Current NOT RECOMMENDED FOR NEW DESIGNS. REFER TO MP172A DESCRIPTION FEATURES R M

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Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16

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Prerelease product(s) SGT105R70ILB Datasheet 700 V, 80 mΩ typ., 21.7 A, e-mode PowerGaN transistor 8 1 5 4 TAB 1 8 4 5 PowerFLAT 8x8 HV for P

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MSF6N70 700V N-Channel MOSFET GENERAL DESCRIPTION The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combinatio

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MSF11N70 N-Channel 700V MOSFET Description The MSF11N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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NV6143C 700V Advanced GaNSlim Power IC NV6143C 1.Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate G

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DPAK GANE350-700BBA 700 V, 350 mOhm Gallium Nitride (GaN) FET in DPAK package 13 March 2025 Product data sheet 1. General description The GANE350

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Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, TOLL package • RDS(on) = 40 mΩ • IDS,max

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Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 31

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NV6145C 700V Advanced GaNSlim Power IC NV6145C 1. Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate

(27 views)

NV6146C 700V Advanced GaNSlim Power IC NV6146C 1. Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate

(27 views)