Silan
Microelectronics
SVG104R5NT(S)_Datasheet
120A, 100V N-CHANNEL MOSFET
DESCRIPTION
SVG104R5NT(S) is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan's LVMOS
technology. The improved process and cell structure have been
especially tailored to minimize on-state resistance, provide superior
switching performance.
This device is widely used in UPS, Power Management for Inverter
Systems.
2
1
3
1.Gate 2.Drain 3.Source
FEATURES
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
1 23
TO-220-3L
1
3
TO-263-2L
NOMENCLATURE
S V GX X X R X N X
Silan
Low voltage SGT MOS
products
Nominal voltage, using 2 digits;
Example: 04 denotes 40V, 10
denotes 100V
Package information.
Example: T:TO-220; D:TO-
252; MJ:TO-251J;
Channel polarity: N denotes N
channel, P denotes P channel
Resistance: R75 denotes 0.7mΩ；7R5
denotes 7.5mΩ; 100 denotes 10mΩ; 101
denotes 100mΩ
ORDERING INFORMATION
Part No.
Package
SVG104R5NT
SVG104R5NS
SVG104R5NSTR
TO-220-3L
TO-263-2L
TO-263-2L
Marking
104R5NT
104R5NS
104R5NS
Hazardous
Substance Control
Pb free
Halogen free
Halogen free
Packing
Tube
Tube
Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
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