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SVG104R5NS - 100V N-CHANNEL MOSFET

Download the SVG104R5NS datasheet PDF. This datasheet also covers the SVG104R5NT variant, as both devices belong to the same 100v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 2 1 3 1.Gate 2.Drain 3.Source 123 TO-262L-3L 123 TO-220F-3L.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 123 TO-220-3L 1 3 TO-263-2L TO-263-6L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVG104R5NT-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVG104R5NS
Manufacturer Silan Microelectronics
File Size 396.53 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVG104R5NS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVG104R5NT(S)(F)(KL)(S6)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S)(F)(KL)(S6) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES 2 1 3 1.Gate 2.Drain 3.Source 123 TO-262L-3L 123 TO-220F-3L  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 123 TO-220-3L 1 3 TO-263-2L TO-263-6L ORDERING INFORMATION Part No.