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Silan Microelectronics

SVG104R5NS Datasheet Preview

SVG104R5NS Datasheet

100V N-CHANNEL MOSFET

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Silan
Microelectronics
SVG104R5NT(S)_Datasheet
120A, 100V N-CHANNEL MOSFET
DESCRIPTION
SVG104R5NT(S) is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan's LVMOS
technology. The improved process and cell structure have been
especially tailored to minimize on-state resistance, provide superior
switching performance.
This device is widely used in UPS, Power Management for Inverter
Systems.
2
1
3
1.Gate 2.Drain 3.Source
FEATURES
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
1 23
TO-220-3L
1
3
TO-263-2L
NOMENCLATURE
S V GX X X R X N X
Silan
Low voltage SGT MOS
products
Nominal voltage, using 2 digits;
Example: 04 denotes 40V, 10
denotes 100V
Package information.
Example: T:TO-220; D:TO-
252; MJ:TO-251J;
Channel polarity: N denotes N
channel, P denotes P channel
Resistance: R75 denotes 0.7mΩ;7R5
denotes 7.5mΩ; 100 denotes 10mΩ; 101
denotes 100mΩ
ORDERING INFORMATION
Part No.
Package
SVG104R5NT
SVG104R5NS
SVG104R5NSTR
TO-220-3L
TO-263-2L
TO-263-2L
Marking
104R5NT
104R5NS
104R5NS
Hazardous
Substance Control
Pb free
Halogen free
Halogen free
Packing
Tube
Tube
Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 1 of 8




Silan Microelectronics

SVG104R5NS Datasheet Preview

SVG104R5NS Datasheet

100V N-CHANNEL MOSFET

No Preview Available !

Silan
Microelectronics
SVG104R5NT(S)_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche
L=0.5mH
Energy(Note 1)
L=0.1mH
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Ratings
100
±20
120
110
480
208
1.7
780
450
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
0.6
62.5
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, TC=25C)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
RG
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=100V, VGS=0V
VGS=±20V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=50A(TO-220-3L)
VGS=10V, ID=50A(TO-263-2L)
f=1MHz
f=1MHz,VGS=0V,VDS=50V
VDD=50V, VGS=10V, RG=3Ω,
ID=50A
(Note 2,3)
VDD=50V, VGS=10V, ID=20A
(Note 2,3)
Min.
100
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
3.6
3.4
2.4
7266
864
24
32
50
83
31
114
37
26
Max.
--
1.0
±100
4.0
4.5
4.2
--
--
--
--
--
--
--
--
--
--
--
Unit
V
V
A
A
W
W/C
mJ
mJ
C
C
Unit
C/W
C/W
Unit
V
µA
nA
V
m
m
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 2 of 8


Part Number SVG104R5NS
Description 100V N-CHANNEL MOSFET
Maker Silan Microelectronics
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