| Title | |
| Description | The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. F... |
| Features |
100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
2
1
1
3
23
1.Gate 2.Drain 3.Source
TO-251J-3L
1 3
TO-252-2L
1 23
TO-220-3L
S V TX X X R X N X
Silan Low voltage trench MOS products
Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V
Pac...
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| Datasheet |
 SVT035R5NT Datasheet - 364.67KB |
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| Price | |
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