| Title | |
| Description | The SVT03120NL2 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. FEATU... |
| Features |
12A, 30V, RDS(on)(typ.)=9.5m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 100% avalanche tested Pb-free lead plating RoHS compliant
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ
Ratings 30
1.0~1.8 12 12 11
Unit V V m A nC
D1 D2 G3
6D 5D 4S
4 5 6
3 2 1
DFN-6-2x2x0....
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| Datasheet |
 SVT03120NL2 Datasheet - 368.25KB |
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