| Title | |
| Description | The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. FEATURE... |
| Features |
180A,30V,RDS(on)(typ.)=2.8m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
2 1
3 1.Gate 2.Drain 3.Source
1 23 TO-220HW-3L
ORDERING INFORMATION
Part No. SVT033R5NAT
Package TO-220HW-3L
Marking 033R5NAT
Hazardous Substance Control Pb free
Packing Type Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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| Datasheet |
 SVT033R5NAT Datasheet - 271.10KB |
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