Title
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Description
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SVT034R0NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems.
FEATURES
100A, 30V, RDS(on)(typ.)=3.0m@VGS=10V ...
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Features
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100A, 30V, RDS(on)(typ.)=3.0m@VGS=10V Low gate charge Low Crss Fast switching Extreme dv/dt rated 100% avalanche tested Pb-free lead plating RoHS compliant
S1 S2 S3 G4
8D 7D 6D 5D
5 6
7 8
8 7 6
5
4 3 2 1
1 2 3 4
PDFN-8-5X6X0.95-1.27
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max.
ID Qg.typ.
Ratings 30
1...
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Datasheet
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SVT034R0NL5 Datasheet - 333.85KB |
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In stock
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