|
Title
|
|
|
Description
|
SVT041R7NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems.
2
1 3
1.Gate 2.Drain 3.Source
FEATURES
195A, 40V...
|
|
Features
|
195A, 40V, RDS(on)(typ.)=1.4m@VGS=10V Low gate charge Low Crss Fast switching Extreme dv/dt rated 100% avalanche tested Pb-free lead plating RoHS compliant
1 2 3
TO-220-3L
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ
Ratings 40
2.0~4.0 1.7 195 175
Unit V V m A nC
ORDERING INFORMATION
Part No....
|
|
Datasheet
|
 SVT041R7NT Datasheet - 305.77KB |
|
Distributor
|
|
|
Stock
|
In stock
|
|
Price
|
|
|
BuyNow
|
 - Manufacturer a
|
