| Title | |
| Description | SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES 178A,40V Low gate charge Low Crss Fast... |
| Features |
178A,40V Low gate charge Low Crss Fast switching Improved dv/dt capability
2
S1
8D
S2
7D
1
S3
6D
G4
5D
3
1.Gate 2.Drain 3.Source
1 2
3 TO-220-3L
8 765
13
TO-252-2L
1 2 34
PDFN-8-5X6X0.95-1.27
ORDERING INFORMATION
Part No. SVT044R5NT SVT044R5NDTR SVT044R5NL5TR
Package TO-220-3L TO-252-2L PDFN-8-5X6X0.95-1.27
Marking 044R...
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| Datasheet |
 SVT044R5ND Datasheet - 394.69KB |
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