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Silan Semiconductors

SGTP5T60SD1D Datasheet Preview

SGTP5T60SD1D Datasheet

600V FIELD STOP IGBT

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Silan
Microelectronics
SGTP5T60SD1D/F/S_Datasheet
5A, 600V FIELD STOP IGBT
DESCRIPTION
The SGTP5T60SD1D/F/S field stop IGBT features low conduction loss
and switching loss, is applicable to UPS, SMPS, and PFC fields.
FEATURES
5A, 600V, VCE(sat)(typ.)=1.5V@IC=5A
Low conduction loss
Fast switching
High input impedance
C
2
1
G
3
E
1
3
12 3
TO-220F-3L
1
3
TO-263-2L
NOMENCLATURE
IGBT series
Technical grade
Current, 70: 70A
N : N Channel
NE : N-channel planar
gate with ESD
T : Field Stop 3/4
U : Field Stop 4+
V : Field Stop 5
W: Field Stop 6
X : Field Stop 7
SGT P 5 T 60 S D X 1 D
Voltage, 65: 650V
120: 1200V
Package
D : TO-252
1,2,3: Version No.
Blank: Standard diode
M : Standard Diode, full range
R : Rapid Diode
B : Rapid Diode, full range
S : Soft Diode, full range
D : Packaged with fast recovery diode
R : RC IGBT
L :Ultra low saturation voltage, f<2KHz
Q : Low saturation voltage, f=2~20KHz
S : Standard, f=20~30KHz
F : Fast switching, f=30~100KHz
UF : Ultra fast switching, f>100KHz
ORDERING INFORMATION
Part No.
SGTP5T60SD1DTR
SGTP5T60SD1F
SGTP5T60SD1S
SGTP5T60SD1STR
Package
TO-252-2L
TO-220F-3L
TO-263-2L
TO-263-2L
Marking
P5T60SD1
P5T60SD1
P5T60SD1S
P5T60SD1S
Hazardous
Halogen free
Halogen free
Halogen free
Halogen free
Packing
Tape&Reel
Tube
Tube
Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 1 of 10




Silan Semiconductors

SGTP5T60SD1D Datasheet Preview

SGTP5T60SD1D Datasheet

600V FIELD STOP IGBT

No Preview Available !

Silan
Microelectronics
SGTP5T60SD1D/F/S_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
TC=25C
TC=100C
Pulsed Collector Current
Diode current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Symbol
VCE
VGE
IC
ICM
IF
PD
TJ
Tstg
SGTP5T60SD1
D
82
Ratings
SGTP5T60SD1
F
600
±30
10
5
15
10
35
-55+150
-55+150
SGTP5T60SD1
S
83
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance,
Junction to Case (IGBT)
Thermal Resistance,
Junction to Case (FRD)
Symbol
RθJC
SGTP5T60SD1
D
Ratings
SGTP5T60SD1
F
SGTP5T60SD1
S
1.51
3.6
1.5
RθJC
2.14
3.7
2.6
Units
V
V
A
A
A
W
C
C
Units
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 2 of 10


Part Number SGTP5T60SD1D
Description 600V FIELD STOP IGBT
Maker Silan Semiconductors
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SGTP5T60SD1D Datasheet PDF






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