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SGTP50V65FD2PU - 650V FIELD STOP IGBT

Description

The SGTP50V65FD2PU Field Stop IGBT adopts Silan Field Stop V technology,

Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

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Datasheet preview – SGTP50V65FD2PU

Datasheet Details

Part number SGTP50V65FD2PU
Manufacturer Silan Semiconductors
File Size 527.29 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTP50V65FD2PU Datasheet
Additional preview pages of the SGTP50V65FD2PU datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SGTP50V65FD2PU_Datasheet 50A, 650V FIELD STOP IGBT DESCRIPTION The SGTP50V65FD2PU Field Stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax.=175C NOMENCLATURE C 2 1 G 3 E 1 23 TO-247N-3L IGBT series Industrial grade Current, 50: 50A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V SGT P 50 V 65 F D 2 PU Package PU : TO-247N-3L 1,2,3 : Version No.
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