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SGTP50V60FD2PF - 600V FIELD STOP IGBT

This page provides the datasheet information for the SGTP50V60FD2PF, a member of the SGTP50V60FD2PF-SilanSemiconductors 600V FIELD STOP IGBT family.

Description

The SGTP50V60FD2PF field stop IGBT adopts Silan Field Stop V technology,

Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

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Datasheet preview – SGTP50V60FD2PF

Datasheet Details

Part number SGTP50V60FD2PF
Manufacturer Silan Semiconductors
File Size 372.02 KB
Description 600V FIELD STOP IGBT
Datasheet download datasheet SGTP50V60FD2PF Datasheet
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Silan Microelectronics SGTP50V60FD2PF_Datasheet 50A, 600V FIELD STOP IGBT DESCRIPTION The SGTP50V60FD2PF field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  50A, 600V, VCE(sat)(typ.)=1.65V@IC=50A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax=175C NOMENCLATURE C 2 1 G 3 E TO-3PF IGBT series Industrial grade Current, 75: 75A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V SGT P 50 V 60 F D 2 PF Package PF : TO-3PF 1,2,3 : Version No.
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