SGTP50V60FD2PF Datasheet | Silan Semiconductors

Silan Microelectronics SGTP50V60FD2PF_Datasheet 50A, 600V FIELD STOP IGBT DESCRIPTION The SGTP50V60FD2PF field stop IGBT adopts Silan Field Stop V technology, Features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. Features - 50A, 600V, VCE(sat)(typ.)=1.65V@IC=50A - Low conduction loss - Ultra-fast switching - High input impedance - TJmax=175C NOMENCLATURE C 2 1 G 3 E TO-3PF IGBT series Industrial grade Current, 75: 75A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V SGT P 50 V 60 F D 2 PF Package PF :...