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Silan Microelectronics
SGTP50V65UF1P7_Datasheet
50A, 650V FIELD STOP IGBT
DESCRIPTION
The SGTP50V65UF1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.
FEATURES
50A, 650V, VCE(sat)(typ.)=1.60V@IC=50A Low conduction loss Ultra-fast switching High input impedance TJmax=175C
C 2 1 G
3 E
123 TO-247-3L
NOMENCLATURE
IGBT series Industrial grade
Current, 50: 50A
N : N Channel NE : N-channel planar
gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7
Voltage, 65: 650V 120: 1200V
SGT P 50 V 65 UF
ORDERING INFORMATION
Part No. SGTP50V65UF1P7
Package TO-247-3L
1 P7
Package P7 : TO-247-3L
1,2,3 : Version No.