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SGTP50V65FDB1P7 - 650V FIELD STOP IGBT

This page provides the datasheet information for the SGTP50V65FDB1P7, a member of the SGTP50V65FDB1P7-SilanSemiconductors 650V FIELD STOP IGBT family.

Description

The SGTP50V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology,

Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

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Datasheet preview – SGTP50V65FDB1P7

Datasheet Details

Part number SGTP50V65FDB1P7
Manufacturer Silan Semiconductors
File Size 475.21 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTP50V65FDB1P7 Datasheet
Additional preview pages of the SGTP50V65FDB1P7 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SGTP50V65FDB1P7_Datasheet 50A, 650V FIELD STOP IGBT DESCRIPTION The SGTP50V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax.=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Technical grade Current, 50: 50A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V SGT P 50 V 65 F D B 1 P7 Package P7: TO-247-3L 1,2,3 : Version No.
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