SGTP50V65FDB1P7 Description
The SGTP50V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology,.
SGTP50V65FDB1P7 Key Features
- 50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A
- Low conduction loss
- Ultra-fast switching
- High input impedance
- TJmax.=175C
SGTP50V65FDB1P7 Datasheet
| Part number | SGTP50V65FDB1P7 |
|---|---|
| Download | SGTP50V65FDB1P7 Datasheet (PDF) |
| File Size | 475.21 KB |
| Manufacturer | Silan Semiconductors |
| Description | 650V FIELD STOP IGBT |
|
|