SGTP50V65FDB1P7 Datasheet | Silan Semiconductors

Silan Microelectronics SGTP50V65FDB1P7_Datasheet 50A, 650V FIELD STOP IGBT DESCRIPTION The SGTP50V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology, Features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. Features - 50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A - Low conduction loss - Ultra-fast switching - High input impedance - TJmax.=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Technical grade Current, 50: 50A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V SGT P 50 V 65 F D B 1...