Datasheet Details
| Part number | SSM9922EO |
|---|---|
| Manufacturer | Silicon Standard |
| File Size | 237.72 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS |
| Datasheet | SSM9922EO-SiliconStandard.pdf |
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Overview: SSM9922(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.
| Part number | SSM9922EO |
|---|---|
| Manufacturer | Silicon Standard |
| File Size | 237.72 KB |
| Description | DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS |
| Datasheet | SSM9922EO-SiliconStandard.pdf |
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G2 S2 S2 D2 TSSOP-8 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 S1 S1 D1 BV DSS RDS(ON) ID 20V 15mΩ 6.8A D1 D2 G1 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9922GEO.
Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Drain Current3, VG S @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 ±12 6.8 5.4 25 1 0.008 V V A A A W W/°C TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 °C °C Thermal Data Symbol Rthj-a Parameter Thermal Resis
| Part Number | Description |
|---|---|
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| SSM9926O | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| SSM9928EO | DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS |
| SSM9928GEO | DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS |
| SSM9928O | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| SSM9915H | N-Channel Enhancement-Mode Power MOSFET |