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SGA-9189Z - Medium Power Discrete SiGe Transistor

General Description

Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz.

With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm.

This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process.

Key Features

  • Typical Gmax, OIP3, P1dB @ 5V,180mA 25 23 21 19 17 15 13 11 9 7 5 Gmax OIP3, P1dB (dBm) OIP3 P1dB 44 42 40 38 36 34 32 30 28 26 24 Gmax (dB).
  • Available in RoHS compliant Green packaging 50-3000 MHz Operation 39 dBm Ouput IP3 Typical at 1.96 GHz 12.2 dB Gain Typical at 1.96 GHz 25.5 dBm P1dB Typical at 1.96 GHz 2.1 dB NF Typical at 0.9 GHz Cost Effective 3-5 V Operation.

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Datasheet Details

Part number SGA-9189Z
Manufacturer Sirenza Microdevices
File Size 102.01 KB
Description Medium Power Discrete SiGe Transistor
Datasheet download datasheet SGA-9189Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.