Datasheet4U Logo Datasheet4U.com

XD010-22S-D2F - Class A/AB 12W Power Amplifier Module

General Description

Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations.

The power transistors are fabricated using Sirenza's latest, high performance LDMOS process.

Key Features

  • Temperature Compensation Temperature Compensation.
  • 4 5 50 W RF impedance 12W Output P1dB Single Supply Operation : Nominally 28V High Gain: 31 dB at 1840 MHz High Efficiency: 25% at 1840 MHz Advanced, XeMOS II LDMOS FETS Temperature Compensation 1 2 3.

📥 Download Datasheet

Datasheet Details

Part number XD010-22S-D2F
Manufacturer Sirenza Microdevices
File Size 218.80 KB
Description Class A/AB 12W Power Amplifier Module
Datasheet download datasheet XD010-22S-D2F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XD010-22S-D2F Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a drop-in, no-tune solution for medium power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50 ohms.