XD010-04S-D4F Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current pensation ensures stable performance over a wide temperature range. It is internally matched to 50 ohms. XD010-04S-D4F XD010-04S-D4FY Pb & Green Package Ro HS pliant 350-600 MHz Class AB 12W Power Amplifier Module Functional Block Diagram Stage 1 Stage 2 Product Features Bias Network Temperature pensation - - - - - - - - - - - - - Available in Ro HS pliant packaging 50 W RF impedance 12W Output P1d B Single Supply Operation : Nominally 28V High Gain: 32 d B at 450 MHz High Efficiency: 30% at 450 MHz Robust 8000V ESD (HBM), Class 3B Xe MOS II LDMOS FETS Temperature pensation RF in VD1 VD2 Case Flange = Ground RF out Applications DTV Public Service Wireless Infrastructure Military munications Unit MHz W d B d B d B % d Bc n S Deg MHz ºC/W ºC/W Min. 350 30 10 26 350 Typ. 12 32 1.0 15 30 -32 2.5 0.5 11 4 Max. 600 2.0 -28 600 Key Specifications Symbol Frequency P1d B Gain Gain Flatness IRL Efficiency Linearity Delay Phase Linearity Frequency RTH, j-l RTH, j-2 Parameter Frequency of Operation Output Power at 1d B pression, 450MHz Gain at 10W Output Power, 450MHz Peak to Peak Gain Variation, 350 - 600MHz Input Return Loss 1W Output Power, 350 - 600MHz Drain Efficiency at 10W CW, 350-600MHz 3rd Order IMD at 10W PEP (Two Tone), 450MHz & 451MHz Signal Delay from Pin 1 to Pin 4 Deviation from Linear Phase (Peak to Peak) Frequency of Operation Thermal Resistance Stage 1 (Junction-to-Case) Thermal Resistance Stage 2 (Junction-to-Case) Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = 230 m A, IDQ2 =150 m A, TFlange =...