XD010-22S-D2F Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage and has internal temperature pensation of the bias voltage to ensure stable performance over the full temperature range. It is a drop-in, no-tune solution for medium power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50 ohms. 1805-1880 MHz Class A/AB 12W Power Amplifier Module Functional Block Diagram Stage 1 Stage 2 Product Features Temperature pensation Temperature pensation - - - - - - - 4 5 50 W RF impedance 12W Output P1d B Single Supply Operation : Nominally 28V High Gain: 31 d B at 1840 MHz High Efficiency: 25% at 1840 MHz Advanced, Xe MOS II LDMOS FETS Temperature pensation Applications RF in VD1 VD2 Case Flange = Ground RF out - - - Base Station PA driver Repeater GSM / EDGE Key Specifications Symbol Frequency P1d B Gain Gain Flatness IRL Efficiency Linearity Delay Phase Linearity RTH, j-l RTH, j-2 Parameter Frequency of Operation Output Power at 1d B pression (single tone) Gain at 5W Output Power (CW) Peak to Peak Gain Variation Input Return Loss 5W Output (CW) Drain Efficiency at 10W CW RMS EVM at 5W EDGE output Peak EVM at 5W EDGE output 3rd Order IMD at 10W PEP (Two Tone; 1MHz ∆F) Electrical Delay Deviation from Linear Phase (Peak to Peak) Thermal Resistance Stage 1 (Junction to Case) Thermal Resistance Stage 2 (Junction to Case) Unit MHz W d B d B d B % % % d Bc n S Deg ºC/W ºC/W -26 10 20 Min. 1805 10 28.5 12 31 0.5 14 25 1.5 5 -32 2.5 0.5 11 4 1.0 Typ. Max. 1880 Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = 230m A, IDQ2 = 115m A, TFlange = 25ºC The information provided herein is believed to be reliable at press time....