XD010-14S-D4F Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ XD010-14S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in GSM and EDGE RF applications. This module is optimized to minimize the EVM at typical operating levels. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage supply and has internal temperature pensation of the bias voltage to ensure stable performance over the full temperature range. It is a drop-in, no-tune solution for medium power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50 ohms. 925-960 MHz Class A/AB 15W Power Amplifier Module Functional Block Diagram Stage 1 Stage 2 Bias Network Temperature pensation - - - - - - - - Product Features 50 W RF impedance 15W Output P1d B Single Supply Operation : Nominally 28V High Gain: 32 d B at 942 MHz High Efficiency: 31% at 942 MHz Robust 8000V ESD (HBM), Class 3B High Peak Power for Lower BER Ultra-low EVM Applications RF in VD1 VD2 Case Flange = Ground RF out - - - Base Station PA driver Repeater GSM / EDGE Key Specifications Symbol Frequency P1d B Gain Gain Flatness IRL Efficiency Linearity Delay Phase Linearity RTH, j-l RTH, j-2 Parameter Frequency of Operation Output Power at 1d B pression (single tone) Gain at 12W Output Power (CW) Peak-to-Peak Gain Variation Input Return Loss 12W CW Drain Efficiency at 12W CW RMS EVM at 8W EDGE output Peak EVM at 8W EDGE output 3rd Order IMD at 12W PEP (Two Tone) Signal Delay from Pin 1 to Pin 4 Deviation from Linear Phase (Peak-to-Peak) Thermal Resistance Stage 1 (Junction-to-Case) Thermal Resistance Stage 2 (Junction-to-Case) Unit MHz W d B d B d B % % % d Bc n S Deg ºC/W ºC/W 12 27 Min. 925 10 30 15 32 0.4 18 31 2.5 6.7 -35 2.5 0.5 11 4 -30 35 1.0 Typ. Max. 960 Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = 230 m A, IDQ2 =158 m A, TFlange = 25ºC 1625-1675The information...