Description | 900V SiC N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) PARAMETER SYMBOL VALUE Drain to Source Voltage (static) VDSmax 900V Continuous Drain Current ID 32A Pulsed Drain Current IDM 128A Max. Power Dissipation PD 278W Gate-to-Source Voltage (dynamic) VGSmax -10/+25V Gate-to-Source Voltage (static) VGSop -5/+20V Operating Junction Temperatu... |
Features |
LOW RDS(ON) AND QG AVALANCHE RATED TO-258 5L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE
APPLICATIONS
SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES ROBOTICS AND SERVO CONTROLS
SD11704
900V SiC N-Channel Power MOSFET - 1
D 12
VDS = 900V
ID @ 25°C = 32A
RDS(o...
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Datasheet | SD11704 Datasheet 97.56KB |