Datasheet Details
| Part number | SD11710 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 463.34 KB |
| Description | 700V SiC N-Channel Power MOSFET |
| Datasheet | SD11710-SolitronDevices.pdf |
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Overview: KEY.
| Part number | SD11710 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 463.34 KB |
| Description | 700V SiC N-Channel Power MOSFET |
| Datasheet | SD11710-SolitronDevices.pdf |
|
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700V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VALUE VDS Drain-Source Voltage VGS Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current * PD Maximum Power Dissipation Linear Derating Factor TC = 25°C TC = 100°C 700 23 to -10 140 99 350 455 3.03 * Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
UNIT V V A A W W / °C THERMAL AND MECHANICAL CHARACTERISTICS SYMBOL CHARACTERISTIC MIN TYP MAX RØJC Junction-to-Case Thermal Resistance TJ Operating Junction Temperature 0.22 0.33 -55 +175 TSTG Storage Temperature -55 +150 TL Soldering Temperature for 10s (1.6mm from case) +300 10 Mounting Torque, 6-32 or M3 Screw 11 0.22 Wt Package Weight 6.2 UNIT °C / W °C °C °C lbf-in N-m oz g CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11710 700V SiC N-Channel Power MOSFET - 2 ELECTRICAL CHARACTERISTICS, STATIC (TJ = 25°C) SYMBOL CHARACTERISTIC V(BR)DSS Drain-Source Breakdown Voltage RDS (on) Drain-source on resistance * VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Threshold Voltage Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current * Pulse test: pulse width < 380 µs, duty cycle < 2%.
ELECTRICAL CHARACTERISTICS, DYNAMIC (TJ = 25°C) SYMBOL CHARACTERISTIC Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacita
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