3SK165A fet equivalent, gaas n-channel dual gate mes fet.
* Low voltage operation
* Low noise: NF = 1.2dB (typ.) at 800MHz
* High gain: Ga = 20dB (typ) at 800MHz
* High stability Application UHF band amplifier, m.
including cellular, cordless phone. Features
* Low voltage operation
* Low noise: NF = 1.2dB (typ.) at 800MHz
The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features
* Low voltage operation
* Low noise: NF = 1.2dB (typ.).
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