* Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb Free. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 30 + - 2
SSD3030N
South Sea Semiconductor
43.87 KB
N-channel mosfet.
SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D TO-252 17 @VGS = 10V 30V 30A 35 @VGS = 4.5V G S D FEA.
📁 Related Datasheet
SSD3030P P-Channel Enhancement Mode MOSFET (South Sea Semiconductor)
SSD3055 N-Channel MOSFET (SeCoS)
SSD3055LA N-Channel MOSFET (South Sea Semiconductor)
SSD30N10J N-Channel MOSFET (SeCoS)
SSD30N15-60D N-Channel MOSFET (SeCoS)
SSD30P06-45D P-Channel MOSFET (SeCoS)
SSD3215B-C N-Channel MOSFET (SeCoS)
SSD355 SUPER SWITCHING CHIP DIODE (Frontier Electronics)
SSD35P03 P-Channel MOSFET (SeCoS)
SSD35P06-C P-Channel MOSFET (SeCoS)
