* Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -20 +
SSS2301A Datasheet (128.68 KB)
SSS2301A
South Sea Semiconductor
128.68 KB
P-channel mosfet.
SSS2301A P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -20V SOT-23 D ID (A) -2.3A RDS(ON) (mΩ) Max 130 @VGS = -4.5V G 190 @VGS = -2.5V.
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