* ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. ȟ!SOT-23 package. ȟ!Pb Free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limi
SSS2321
South Sea Semiconductor
52.55 KB
P-channel mosfet.
SSS2321 P-Channel Enhancement Mode MOSFET SOT-23 D Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 60 @VGS = -4.5V G 21 23 YW -20V -3.4A 80 @VGS.
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