SSS5N20 - Dual N-Channel MOSFET

South Sea Semiconductor

Key Features

Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. G1(6) S1(1) G2(4) S2(3).

SSS5N20 dual n-channel mosfet by South Sea Semiconductor - Datasheet Preview

Datasheet Details

Part number	SSS5N20
Manufacturer	South Sea Semiconductor
File Size	85.66 KB
Description	Dual N-Channel MOSFET
Datasheet	SSS5N20 Datasheet

Full PDF Text Transcription for SSS5N20 (Reference)

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SSS5N20 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 4.5V 20V 4A 45 @VGS = 2.5V D1 (2, 5) 1 TSOP-6 D2 (2, 5) FEATURES ...

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GS = 4.5V 20V 4A 45 @VGS = 2.5V D1 (2, 5) 1 TSOP-6 D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. G1(6) S1(1) G2(4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 20 + - 10 4 25 2 1.

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