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VN01C - N-Channel MOSFET

Features

  • D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VN01C
Manufacturer Supertex
File Size 250.32 KB
Description N-Channel MOSFET
Datasheet download datasheet VN01C Datasheet
Additional preview pages of the VN01C datasheet.

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Full PDF Text Transcription

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~ 'flI !iupertexinc. VN01C N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOClS 160V 200V ROS{ON) (max) 100 100 IOION) (min) 0.4A O.4A TO-39 VN0116N2 VN0120N2 Order Number I Package TO-92 TQ-220 VN0116N3 VN0120N3 VN0116N5 VN0120N5 Dice VN0116ND VN0120ND Features D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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