* D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhanc
VN01C
Supertex
250.32 KB
N-channel mosfet.
~ 'flI !iupertexinc. VN01C N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOClS 160V 200V ROS{ON) (max) 100 10.
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