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Supertex

VP01C Datasheet Preview

VP01C Datasheet

P-Channel Enhancement-Mode Vertical DMOS FETs

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" !iupertexinc.
VP01C
P-Channel Enhancement-Mode
Vertical DMOS Power FETs
Ordering Information
BVoss '
BVOGS
-160V
-200V
ROS(ON)
(max)
250
250
IO(ON)
(min)
-250mA
-250mA
TO·39
VP0116N2
VP0120N2
Order Number' Package
TO·92
TO·220
VP0116N3
VP0116N5
VP0120N3
VP0120N5
DICE
VP0116ND
VP0120ND
Features
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low CISS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage,high input impedance, low input capaCitance, and
fast switching speeds are desired.
Applications
o Motor control
o Convertors
o Amplifiers
o Switches
o Power supply circuits
o Driver (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature"
*Oistance of 1.6 mm from case for 10 seconds.
Package Options
(Note 1)
±20V
i
TO-92
W
TO-39
~
TO-220
Note 1: See Package Outline section for discrete pinouts.
9-9




Supertex

VP01C Datasheet Preview

VP01C Datasheet

P-Channel Enhancement-Mode Vertical DMOS FETs

No Preview Available !

Thermal Characteristics
Package
ID (continuous)·
ID (pulsed)·
TO-39
TO-92
-0.2A
-O.lA
TO-220
-0.425A
• 10 (continuous) Is limited by max rated Tr
-0.65A
-0.35A
-1.0A
Power Dissipation
@Tc =25°C
3.5W
1.0W
15.0W
9,"
°C/W
125
170
70
9,c
°e/W
35
125
8.3
VP01C
IDR IDRM•
-0.2A
-O.lA
-0.425A
-0.65A
-0.35A
-1.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
(Notes 1 and 2)
Symbol
BVoss
VGS(th)
aVaSCthl
lass
loss
Parameter
Min Typ Max
Drain-to-Source
Breakdown Voltage
I VP0120
I VPOl16
-200
-160
Unit
V
Gate Threshold Voltage
-1.5 -3.5 V
Change in VGS(thl with Temperature
-6.0 mV/oC
Gate Body Leakage
-100 nA
Zero Gate Voltage Drain Current
-10 I!A
-1 mA
10(ON)
ON-State Drain Current
-100 -400
-350 -700
mA
ROS(ON)
Static Drain-to-Source
ON-State Resistance
25 40
n
15 25
aROS(ON)
GFS
CISS
Coss
CRSS
td(ONI
t,
t(j(OFF)
\
Vso
tIT
Change in ROS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.6
50 70
50
20
5
4
4
4
4
1.0
500
'Y%C
mU
60
30 pF
10
10
10
ns
10
10
V
ns
Note 1: All D.C. parameters 100% tested at 25'C unless otherwise stated. (Pulse test: 300~s pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
Conditions
10 = -1.0mA, Vas = 0
Vas = Vos' 10 = -1.0mA
10 = -1.0mA, VGS = Vos
VGS = ±20V, Vos = 0
Vas = 0, Vos = Max Rating
VGS = 0, Vos = 0.8 Max Rating
TA = 125°C
Vas = -5V, Vos = -25V
VGS = -10V, Vos =-25V
VGS = -5V, 10 = -50mA
VGS = -10V, 10 = -100mA
10 = -100mA, VGS = -10V
Vos = -25V, 10 = -100mA
VGS = 0, Vos = -25V
1=1 MHz
Voo= -25V
10= -100mA
Rs = 50n
Iso = -0.5A, VGS = 0
Iso = -0.5A, VGS = 0
Switching Waveforms and Test Circuit
t(ON)
Output - - - - - - - \ I
10%
t(OFF)
iI----PULSE---i
GENERATOR
1
J---<~-OSCOPE
I
v-~~~~-+~
D.U.T.
I
1
1
I
1
i ' " IL. __________1
9-10


Part Number VP01C
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Maker Supertex
Total Page 4 Pages
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